Title :
A 2-Channel Parallel 0.35im SiGe BiCMOS Laser Diode Driver
Author :
Xie, Feng ; Xu, YanYi ; Yin, Ming
Author_Institution :
Sch. of Electron. Eng., Naval Univ. of Eng., Wuhan, China
Abstract :
This paper presents a 2-channel parallel laser diode driver processed by 0.35μm SiGe BiCMOS process. Each channel works at bite rate of 4Gbps. To increase bandwidth a "cross couple" capacitance cancel technology is introduced. An isolation method for parallel amplifier is used to avoid substrate coupling noise brought by the adjacent channel. The test results show the LDD can supply 20~80mA modulation current and 1~30mA biascurrent.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; driver circuits; isolation technology; network synthesis; optical fibre communication; semiconductor lasers; 2-channel parallel BiCMOS laser diode driver; bit rate 4 Gbit/s; cross couple capacitance cancel technology; current 1 mA to 30 mA; current 20 mA to 80 mA; isolation method; parallel amplifier; size 0.35 mum; Bandwidth; BiCMOS integrated circuits; Capacitance; Diode lasers; Driver circuits; Germanium silicon alloys; Isolation technology; Noise cancellation; Silicon germanium; Testing;
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
DOI :
10.1109/SOPO.2010.5504135
