• DocumentCode
    2938255
  • Title

    Thick-Gate-Oxide MOS Structures with Sub-Design-Rule (SDR) Polysilicon Lengths for RF Circuit Applications

  • Author

    Xu, Haifeng ; O, Kenneth K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL
  • fYear
    2008
  • fDate
    23-25 Jan. 2008
  • Firstpage
    187
  • Lastpage
    190
  • Abstract
    Use of sub-design-rule (SDR) thick-gate-oxide MOS structures can significantly improve RF performance. Utilizing 3-stack 3.3-V MOSFET´s with an SDR channel length, a 31.3-dBm 900-MHz Bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB is realized. A 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB is also demonstrated. SDR MOS varactors achieve Qmin of ~ 80 at 24 GHz with a tuning range of ~ 40%.
  • Keywords
    MIS structures; MOSFET; radiofrequency integrated circuits; Bulk CMOS T/R switch; MOSFET; RF circuit application; SDR MOS varactors; frequency 2.4 GHz; frequency 900 MHz; insertion loss; sub-design-rule polysilicon lengths; thick-gate-oxide MOS structures; voltage 3.3 V; CMOS technology; Circuits; Insertion loss; Leg; MOSFETs; Radio frequency; Switches; Transistors; Varactors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1855-8
  • Electronic_ISBN
    978-1-4244-1856-5
  • Type

    conf

  • DOI
    10.1109/SMIC.2008.53
  • Filename
    4446287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2938255