DocumentCode
2938294
Title
50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
Author
Gentile, G. ; Buisman, K. ; Akhoukh, A. ; de Vreede, L.C.N. ; Rejaei, B. ; Nanver, L.K.
Author_Institution
Lab. of High Freq. Technol. & Components, Tech. Univ. Delft, Delft
fYear
2008
fDate
23-25 Jan. 2008
Firstpage
199
Lastpage
202
Abstract
We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.
Keywords
diodes; phase shifters; silicon; varactors; Si; coplanar phase shifter; dc bias voltage; differential phase shift; frequency 50 GHz; integrated distributed phase shifter; silicon on glass; varactor diodes; voltage 2.1 V to 15 V; Capacitance; Coplanar waveguides; Frequency; Glass; Phase shifters; Phased arrays; Schottky diodes; Semiconductor diodes; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location
Orlando, FL
Print_ISBN
978-1-4244-1855-8
Electronic_ISBN
978-1-4244-1856-5
Type
conf
DOI
10.1109/SMIC.2008.56
Filename
4446290
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