• DocumentCode
    2938294
  • Title

    50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes

  • Author

    Gentile, G. ; Buisman, K. ; Akhoukh, A. ; de Vreede, L.C.N. ; Rejaei, B. ; Nanver, L.K.

  • Author_Institution
    Lab. of High Freq. Technol. & Components, Tech. Univ. Delft, Delft
  • fYear
    2008
  • fDate
    23-25 Jan. 2008
  • Firstpage
    199
  • Lastpage
    202
  • Abstract
    We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.
  • Keywords
    diodes; phase shifters; silicon; varactors; Si; coplanar phase shifter; dc bias voltage; differential phase shift; frequency 50 GHz; integrated distributed phase shifter; silicon on glass; varactor diodes; voltage 2.1 V to 15 V; Capacitance; Coplanar waveguides; Frequency; Glass; Phase shifters; Phased arrays; Schottky diodes; Semiconductor diodes; Varactors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1855-8
  • Electronic_ISBN
    978-1-4244-1856-5
  • Type

    conf

  • DOI
    10.1109/SMIC.2008.56
  • Filename
    4446290