An Ultra-Wideband Resistive-Feedback Low-Noise Amplifier with Noise Cancellation in 0.18μm Digital CMOS

Author

Hu, Jianyun ; Zhu, Yunliang ; Wu, Hui

Author_Institution

Dept. of Electr. & Comput. Eng., Rochester Univ., Rochester, NY

fYear

2008

fDate

23-25 Jan. 2008

Firstpage

218

Lastpage

221

Abstract

We present a wideband resistive feedback CMOS low-noise amplifier (LNA) with noise cancellation technique for ultra-wideband applications. The LNA achieves a 3-dB bandwidth of 0.7-6.5 GHz, power gain of 12.5 dB, and noise figure of 3.5-4.2 dB within the 3-dB bandwidth. The input matching is better than -11 dB from 0.7 to 12 GHz. The IIP3 is measured -5 dBm at 5 GHz. It is implemented in a 0.18 mum standard digital CMOS technology, occupies an area of 0.78 mmtimes0.68 mm, and consumes 11.1 mW from a 1.8 V supply.

Keywords

CMOS digital integrated circuits; low noise amplifiers; noise; ultra wideband communication; digital CMOS; frequency 0.7 GHz to 12 GHz; gain -5 dB; gain 12.5 dB; gain 3 dB; gain 3.5 dB to 4.2 dB; noise cancellation; power 11.1 mW; size 0.18 mum; ultra-wideband resistive-feedback low-noise amplifier; voltage 1.8 V; Bandwidth; Broadband amplifiers; Frequency; Impedance matching; Low-noise amplifiers; Noise cancellation; Noise measurement; Phase noise; Ultra wideband technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1855-8

Electronic_ISBN

978-1-4244-1856-5

Type

conf

DOI

10.1109/SMIC.2008.61

Filename

4446295