Millimeter-wave packaging on alumina board for E-band CMOS power amplifiers

Author

Yang Zhang ; Dixian Zhao ; Reynaert, Patrick

Author_Institution

Dept. Elektrotech. ESAT-MICAS, KU Leuven, Leuven, Belgium

fYear

2015

fDate

25-28 Jan. 2015

Firstpage

1

Lastpage

3

Abstract

A millimeter-wave bond-wire packaging and micro-strip to waveguide transition are proposed for E-band CMOS power amplifiers. A 700μm cavity is used to shorten bond-wire length, and the bond-wire inductance is compensated by micro-strip matching network, realizing a good packaging performance with 0.3dB loss over 30GHz bandwidth. A low-cost Alumina board is used for micro-strip to waveguide transition, without back-cavity or modification of standard waveguide. Two coupling pads are introduced to realize the transition from 71 to 86GHz frequency range. Gain, output power and drain efficiency of a 40nm E-CMOS E-band power amplifier, mounted on the presented package, were measured.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; integrated circuit packaging; microstrip circuits; millimetre wave power amplifiers; E-band CMOS power amplifiers; alumina board; bond-wire inductance; bond-wire length; drain efficiency; frequency 71 GHz to 86 GHz; loss 0.3 dB; microstrip matching network; microstrip-waveguide transition; millimeter-wave bond-wire packaging; output power; size 40 nm; CMOS integrated circuits; Coplanar waveguides; Loss measurement; Packaging; Power amplifiers; Semiconductor device measurement; Waveguide transitions; CMOS; E-band; package; power amplifier; transition; waveguide; wire-bond;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2015 IEEE Topical Conference on

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/PAWR.2015.7139195

Filename

7139195