DocumentCode :
2939749
Title :
Predicting IGBT Junction Temperature with Thermal Network Component Model
Author :
Ming Chen ; Hu, An ; Yang, Xidang
Author_Institution :
Nat. Key Lab. for Vessel Integrated Power Syst. Technol., Naval Univ. of Eng., Wuhan, China
fYear :
2011
fDate :
25-28 March 2011
Firstpage :
1
Lastpage :
4
Abstract :
As the operation performances and reliability of semiconductor devices are tightly related to its junction temperature, the research on the junction temperature prediction and thermal modeling do a significant meaning to extend services lifetime and improve application reliability of the IGBT modules. The physical structure and conception, RC thermal compact network component model, test principle and extraction platform of the transient thermal impedance of IGBT module are briefly introduced. The parameters of RC Foster thermal network of a certain type IGBT is derived based on the junction-to-case transient thermal impedance curve. With the thermal compact network component model, the transient junction temperature can be predicted. The simulation results show that the method of predicting the junction temperature with thermal network model is effective.
Keywords :
insulated gate bipolar transistors; semiconductor device models; semiconductor device reliability; IGBT junction temperature; RC foster thermal network; RC thermal compact network component; physical structure; semiconductor device reliability; thermal network component; transient junction temperature; transient thermal impedance; Impedance; Insulated gate bipolar transistors; Junctions; Temperature measurement; Thermal resistance; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2011 Asia-Pacific
Conference_Location :
Wuhan
ISSN :
2157-4839
Print_ISBN :
978-1-4244-6253-7
Type :
conf
DOI :
10.1109/APPEEC.2011.5749030
Filename :
5749030
Link To Document :
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