DocumentCode
2939749
Title
Predicting IGBT Junction Temperature with Thermal Network Component Model
Author
Ming Chen ; Hu, An ; Yang, Xidang
Author_Institution
Nat. Key Lab. for Vessel Integrated Power Syst. Technol., Naval Univ. of Eng., Wuhan, China
fYear
2011
fDate
25-28 March 2011
Firstpage
1
Lastpage
4
Abstract
As the operation performances and reliability of semiconductor devices are tightly related to its junction temperature, the research on the junction temperature prediction and thermal modeling do a significant meaning to extend services lifetime and improve application reliability of the IGBT modules. The physical structure and conception, RC thermal compact network component model, test principle and extraction platform of the transient thermal impedance of IGBT module are briefly introduced. The parameters of RC Foster thermal network of a certain type IGBT is derived based on the junction-to-case transient thermal impedance curve. With the thermal compact network component model, the transient junction temperature can be predicted. The simulation results show that the method of predicting the junction temperature with thermal network model is effective.
Keywords
insulated gate bipolar transistors; semiconductor device models; semiconductor device reliability; IGBT junction temperature; RC foster thermal network; RC thermal compact network component; physical structure; semiconductor device reliability; thermal network component; transient junction temperature; transient thermal impedance; Impedance; Insulated gate bipolar transistors; Junctions; Temperature measurement; Thermal resistance; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Power and Energy Engineering Conference (APPEEC), 2011 Asia-Pacific
Conference_Location
Wuhan
ISSN
2157-4839
Print_ISBN
978-1-4244-6253-7
Type
conf
DOI
10.1109/APPEEC.2011.5749030
Filename
5749030
Link To Document