Charge collection response of SI GaAs p-i-n detectors

Author

Sellin, P.J. ; Buttar, C.M. ; Berwick, K. ; Brozel, M.R. ; Cowperthwaite, M.

Author_Institution

Dept. of Phys., Sheffield Univ., UK

Volume

2

fYear

1994

fDate

30 Oct-5 Nov 1994

Firstpage

505

Abstract

The charge collection response of semi insulating GaAs p-i-n detectors to alpha particles has been measured and compared to the results of a simple charge carrier drift model. The model uses an electric field distribution which had been measured using a surface probing technique. By comparing the simulated data with the experimentally measured charge collection efficiency mean drift lifetimes have been deduced for the charge carriers. The model has also been used to simulate the charge collection response of GaAs detectors to gamma rays and to minimum ionising particles

Keywords

alpha-particle detection; gallium arsenide; p-i-n diodes; semiconductor counters; GaAs; alpha particles; charge carrier drift model; charge collection response; electric field distribution; gamma rays; mean drift lifetimes; minimum ionising particles; semi-insulating GaAs p-i-n detectors; surface probing technique; Alpha particles; Charge carriers; Charge measurement; Current measurement; Detectors; Electric variables measurement; Gallium arsenide; Insulation; PIN photodiodes; Particle measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record

Conference_Location

Norfolk, VA

Print_ISBN

0-7803-2544-3

Type

conf

DOI

10.1109/NSSMIC.1994.474553

Filename

474553