MR enchancement in CPP spin valve by insertion of a ferromagnetic layer within the spacer layer

In this article, the authors proposed an alternative method to improve the magnetoresistance (MR) by inserting a thin ferromagnetic (FM) layer in the nonmagnetic (NM) spacer of a basic spin valve (SV) trilayer structure (FM-NM-FM), thus creating a pentalayer structure. It is found that MR value can be doubled by inserting a FM layer with high intrinsic spin polarization, such as halfmetallic CrO₂.