• DocumentCode
    2942401
  • Title

    Design of GaN and SiC 5–20kV vertical superjunction structures

  • Author

    Zhongda Li ; Naik, H. ; Chow, T.P.

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2012
  • fDate
    7-9 Aug. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report on the design, simulations and optimization of 5-20kV GaN and SiC vertical superjunction structures. The space charge in the GaN and SiC superjunction pillars have been optimized using superjunction p-n diode, and the best trade-off between breakdown voltage (BV) and specific on-resistance (Ron, sp) have been obtained by varying the pillar dosage, length and width.
  • Keywords
    gallium compounds; p-n junctions; semiconductor device breakdown; semiconductor diodes; silicon compounds; space charge; GaN; SiC; breakdown voltage; pillar dosage; pillar length; pillar width; space charge; specific on-resistance; superjunction p-n diode; superjunction pillars; vertical superjunction structures; voltage 5 kV to 20 kV; GaN; SiC; super junction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lester Eastman Conference on High Performance Devices (LEC), 2012
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4673-2298-0
  • Electronic_ISBN
    978-1-4673-2300-0
  • Type

    conf

  • DOI
    10.1109/lec.2012.6410985
  • Filename
    6410985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2942401