A 2 GHz oscillator using a monolithically integrated AlN TFBAR

Author

Norling, Martin ; Enlund, Johannes ; Katardjiev, Ilia ; Gevorgian, Spartak

Author_Institution

Physical Electronics Laboratory, Chalmers University of Technology, GÃ¶teborg, Sweden

fYear

2008

fDate

15-20 June 2008

Firstpage

843

Lastpage

846

Abstract

A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.

Keywords

Ge-Si alloys; III-V semiconductors; acoustic resonators; aluminium compounds; flip-chip devices; multichip modules; oscillators; phase noise; semiconductor thin films; thin film devices; transistors; wide band gap semiconductors; AlN; AlN TFBAR; AlN thin-film bulk acoustic resonator; Si; SiGe; SiGe transistors; frequency 2 GHz; high-resistivity silicon; oscillator; silicon-on-silicon multi-chip module; Acoustic devices; CMOS technology; Costs; Film bulk acoustic resonators; Germanium silicon alloys; Hybrid integrated circuits; Microwave oscillators; Q factor; Silicon germanium; Substrates; Acoustic resonator; TFBAR; hybrid integration; multi-chip module; oscillator; thin film device;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4632964

Filename

4632964