DocumentCode
2942874
Title
Quantifying distortion of RF power amplifiers for estimation of predistorter performance
Author
Draxler, Paul J. ; Zhu, Anding ; Yan, Jonmei J. ; Kolinko, Pavel ; Kimball, Donald F. ; Asbeck, Peter M.
Author_Institution
Qualcomm Inc., 5775 Morehouse Dr., San Diego, CA, USA
fYear
2008
fDate
15-20 June 2008
Firstpage
931
Lastpage
934
Abstract
This paper demonstrates a method to quantify the accuracy of memory models and the effectiveness of digital predistortion of power amplifiers with memory. By using assumptions of periodic stationarity, coherent ensemble averaging and a stable measurement system, we are able to decompose the waveform distortion into memoryless, deterministic memory, and random memory contributions. We demonstrate how this can be used to evaluate the performance of a power amplifier and project its optimal performance with predistortion. We also show experimentally that the dynamic deviation reduction-based Volterra series digital predistortion technique has convergent behavior, moving towards these quantified targets when applied to a class AB power amplifier implemented with GaN FETs.
Keywords
III-V semiconductors; Volterra series; distortion measurement; gallium compounds; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; GaN; GaN FETs; RF power amplifiers; convergent behavior; predistorter performance; random memory contributions; reduction-based Volterra series digital predistortion; Distortion measurement; Educational institutions; FETs; Gallium nitride; Linearization techniques; Power amplifiers; Power system modeling; Predistortion; Radio frequency; Radiofrequency amplifiers; Behavioral modeling; Volterra series; linearization; power amplifier; predistorter;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location
Atlanta, GA
ISSN
0149-645X
Print_ISBN
978-1-4244-1780-3
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2008.4632986
Filename
4632986
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