A novel capacitive absolute pressure sensor using SON technology

Author

Hao, X. ; Masuda, Atsushi ; Higuchi, Kenichi ; Tanaka, Shoji ; Maenaka, Kazusuke ; Takao, Hidekuni ; Nakamura, Jun ; Sudoh, Koichi

Author_Institution

Maenaka Human-Sensing Fusion Project, Japan Sci. & Technol. Agency (JST), Himeji, Japan

fYear

2012

fDate

28-31 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

A novel capacitive absolute pressure sensor is fabricated and evaluated in this paper. The pressure sensitive membrane is formed by SON (Silicon on Nothing) technology [1], and a glass chip with Au/Ti electrodes is bonded on the membrane opposite by anodic bonding technique at 400°C to detect the pressure change. Compared to the existing capacitive absolute pressure sensors, the hermetical sealing process is not required, high vacuum cavity can be easily formed, an excellent long-term stability can be achieved, and detection circuitry can be easily integrated with the sensor.

Keywords

capacitive sensors; elemental semiconductors; gold; membranes; pressure sensors; silicon; titanium; SON technology; anodic bonding technique; capacitive absolute pressure sensor; detection circuitry; electrodes; glass chip; hermetical sealing process; long-term stability; pressure sensitive membrane; silicon on nothing technology; temperature 400 degC; Biomembranes; Bonding; Cavity resonators; Electrodes; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2012 IEEE

Conference_Location

Taipei

ISSN

1930-0395

Print_ISBN

978-1-4577-1766-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2012.6411068

Filename

6411068