Title :
A novel capacitive absolute pressure sensor using SON technology
Author :
Hao, X. ; Masuda, Atsushi ; Higuchi, Kenichi ; Tanaka, Shoji ; Maenaka, Kazusuke ; Takao, Hidekuni ; Nakamura, Jun ; Sudoh, Koichi
Author_Institution :
Maenaka Human-Sensing Fusion Project, Japan Sci. & Technol. Agency (JST), Himeji, Japan
Abstract :
A novel capacitive absolute pressure sensor is fabricated and evaluated in this paper. The pressure sensitive membrane is formed by SON (Silicon on Nothing) technology [1], and a glass chip with Au/Ti electrodes is bonded on the membrane opposite by anodic bonding technique at 400°C to detect the pressure change. Compared to the existing capacitive absolute pressure sensors, the hermetical sealing process is not required, high vacuum cavity can be easily formed, an excellent long-term stability can be achieved, and detection circuitry can be easily integrated with the sensor.
Keywords :
capacitive sensors; elemental semiconductors; gold; membranes; pressure sensors; silicon; titanium; SON technology; anodic bonding technique; capacitive absolute pressure sensor; detection circuitry; electrodes; glass chip; hermetical sealing process; long-term stability; pressure sensitive membrane; silicon on nothing technology; temperature 400 degC; Biomembranes; Bonding; Cavity resonators; Electrodes; Silicon; Temperature measurement;
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2012.6411068
