DocumentCode
2944131
Title
Fully self-aligned tri-layer a-Si:H TFT with ultra-thin active layer
Author
Thomasson, D.B. ; Jackson, T.N.
Author_Institution
Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear
1997
fDate
23-25 June 1997
Firstpage
50
Lastpage
51
Abstract
To the best of our knowledge, the simple processing method described is the first fully self-aligned trilayer TFT with deposited n/sup +/ contacts. This process requires one less mask than our standard tri-layer process, with one additional unmasked backside exposure. In addition, these fully self-aligned TFTs have an ultra-thin a-Si:H layer that results in improved performance.
Keywords
MISFET; amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; silicon; thin film transistors; Mo-SiN-Si:H; a-Si:H TFT; deposited n/sup +/ contacts; fully self-aligned trilayer TFT; processing method; ultra-thin active layer; unmasked backside exposure; Active matrix liquid crystal displays; Amorphous silicon; Character generation; Crystalline materials; Etching; Laboratories; Parasitic capacitance; Silicon compounds; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1997. 5th
Conference_Location
Fort Collins, CO, USA
Print_ISBN
0-7803-3911-8
Type
conf
DOI
10.1109/DRC.1997.612470
Filename
612470
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