High efficiency In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT for low supply voltage wireless communications

Author

Wang, Y.C. ; Kuo, J.M. ; Lothian, J.R. ; Ren, F. ; Tsai, H.S. ; Weiner, J.S. ; Lin, James ; Tate, A. ; Mayo, W.E. ; Chen, Y.K.

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

23-25 June 1997

Firstpage

70

Lastpage

71

Abstract

In the RF transmit/receive block of a wireless personal communication system, the power amplifiers consume the largest battery power. To reduce the size and power consumption of the systems, the demand for low supply voltage power transistors with high efficiency is growing for portable wireless communication applications. High electron mobility transistors (HEMTs) are an excellent candidate for such applications due to their high maximum drain current, low knee voltage and high cutoff frequencies. In this talk we demonstrate a high efficiency and low supply voltage power transistor for portable wireless communication applications using a new In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P-In/sub 0.2/Ga/sub 0.8/As double-heterojunction pseudomorphic HEMT (DHPHEMT).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; land mobile radio; power HEMT; InAlGaP-InGaAs; RF transmit/receive block; double-heterojunction pseudomorphic HEMT; efficiency; low voltage portable wireless personal communication; power HEMT; power amplifier; Batteries; HEMTs; Low voltage; MODFETs; Power amplifiers; Power supplies; Power transistors; Radio frequency; Radiofrequency amplifiers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1997. 5th

Conference_Location

Fort Collins, CO, USA

Print_ISBN

0-7803-3911-8

Type

conf

DOI

10.1109/DRC.1997.612478

Filename

612478