DocumentCode
2944348
Title
Temperature compensation technique of GaAs FET by rotating the gate orientation
Author
Furukawa, H. ; Tanaka, T. ; Fukui, T. ; Tateoka, K. ; Nagata, S. ; Ueda, D.
Author_Institution
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fYear
1997
fDate
23-25 June 1997
Firstpage
72
Lastpage
73
Abstract
It is well known that GaAs power FET occasionally shows thermal runaway. There are some explanations about this effect, such as increase of leakage current and lowering the potential barrier of the gate as the increase of temperature. We found such effect is closely related to the gate orientation for the first time. Based on this characteristics of GaAs FET, we demonstrate temperature compensation technique of GaAs power amplifier just by rotating the gate orientation of the FET.
Keywords
III-V semiconductors; compensation; gallium arsenide; power field effect transistors; GaAs; GaAs power FET; gate orientation; leakage current; potential barrier; temperature compensation; thermal runaway; Doping; FETs; Gallium arsenide; Gold; Laboratories; Leakage current; Power amplifiers; Temperature; Thermal stresses; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1997. 5th
Conference_Location
Fort Collins, CO, USA
Print_ISBN
0-7803-3911-8
Type
conf
DOI
10.1109/DRC.1997.612479
Filename
612479
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