Title :
Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures
Author :
Nemati, Hossein M. ; Fager, Christian ; Gustavsson, Ulf ; Jos, Rik ; Zirath, Herbert
Author_Institution :
GigaHertz Centre, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
Abstract :
In this paper, switched mode power amplifiers classes of operation and device technologies are characterized versus input power and output supply voltage. The results are used to identify optimal control schemes for use in polar transmitter architectures. Then the effects of different control schemes on the requirements for the power amplifier, and the envelope amplifier, as the main building blocks of this architecture, are investigated.
Keywords :
MOS integrated circuits; power amplifiers; GaN; envelope amplifier; optimal control schemes; polar transmitter architectures; switched mode LDMOS; switched mode power amplifiers; Bandwidth; Gallium arsenide; Gallium nitride; Operational amplifiers; Optimal control; Power amplifiers; Semiconductor optical amplifiers; Switched-mode power supply; Transmitters; Voltage; GaN HEMT; LDMOS; Power amplifiers; polar; transmitter;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633066
