A novel Si bistable diode

Author

Xuegen Zhu ; Xinyu Zheng ; Pak, M. ; Tanner, M.O. ; Wang, K.L.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1997

fDate

23-25 June 1997

Firstpage

88

Lastpage

89

Abstract

We have previously reported bistable I-V characteristics in a delta-doped SiGe/Si diode and its application to a SRAM cell. In this paper, a novel full Si bistable diode is studied. The full Si feature of the device makes it more compatible with mainstream Si technology. The I-V bistability is achieved by band engineering with two double delta-doped tunnel junctions. Since the bistability is based on quantum tunneling, the device can be conveniently built in a vertical stack leading to further reduction of device area. The new bistable diode operates with several positive feedback mechanisms, which lead to fast turn-on and turn-off speeds.

Keywords

SRAM chips; elemental semiconductors; quantum interference devices; silicon; tunnel diodes; I-V bistability; SRAM cell; Si; Si bistable diode; band engineering; bistable I-V characteristics; double delta-doped tunnel junctions; fast turn-off speed; fast turn-on speed; positive feedback mechanisms; quantum tunneling; temperature dependence; vertical stack; Charge carrier processes; Conductivity; Diodes; Electron devices; Etching; Germanium silicon alloys; Laboratories; Random access memory; Silicon germanium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1997. 5th

Conference_Location

Fort Collins, CO, USA

Print_ISBN

0-7803-3911-8

Type

conf

DOI

10.1109/DRC.1997.612485

Filename

612485