60GHz High Isolation SPDT MMIC switches using shunt pHEMT resonator

This paper describes the successful development of a 60 GHz high isolation SPDT MMIC switch for wireless applications. In order to improve the isolation, the shunt pHEMT resonator, which is reduced on-state resistance of FET, is proposed. The developed V-band SPDT switch shows an isolation of over 45 dB and an insertion loss of 1.4 dB at 60 GHz. Input and output return losses are better than 18 dB in ON-state. Moreover, the switch requires no complex off-chip bias circuitry and consumes no DC power. These performances of high isolation and low insertion loss presented here are the best among the V-band pHEMT MMIC switches.