DocumentCode
2944569
Title
Comprehensive interconnect etch tool qualification methodology for high volume mixed technology node production
Author
Frankwicz, P.S. ; Clark, R. ; Hayes, K. ; Johnson, M. ; Kennedy, L. ; Scipione, D. ; Viera, C. ; Moutinho, T.
Author_Institution
Nat. Semicond. Corp., South Portland
fYear
2007
fDate
15-17 Oct. 2007
Firstpage
1
Lastpage
4
Abstract
Incoming production to this tool set can span technology nodes of 500nm to 180nm; I-line to deep ultraviolet photoresist and numerous anti-reflective coating (ARC) and interconnect metal stack schemes. This paper will discuss the methodology and merits of a multiple parametric qualification (MPQ) protocol for high volume mixed node metal interconnect etch production.
Keywords
integrated circuit interconnections; photoresists; semiconductor device manufacture; anti-reflective coating; deep ultraviolet photoresist; interconnect etch production; interconnect etch tool qualification; interconnect metal stack schemes; multiple parametric qualification; node production; Chemical technology; Corrosion; Etching; Manufacturing processes; Monitoring; Production; Qualifications; Semiconductor device manufacture; Space technology; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
978-1-4244-1142-9
Electronic_ISBN
1523-553X
Type
conf
DOI
10.1109/ISSM.2007.4446830
Filename
4446830
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