Effect of Ge profile on the frequency response of a SiGe pFET on sapphire technology

Author

Mathew, S.J. ; Ansley, W.E. ; Dubbelday, W.B. ; Cressler, J.D. ; Ott, J. ; Chu, J.O. ; Meyerson, B.S. ; Kavanagh, K.L. ; Mooney, P.M. ; Lagnado, I.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

fYear

1997

fDate

23-25 June 1997

Firstpage

130

Lastpage

131

Abstract

We investigate the dc and microwave properties of a SiGe pFET on sapphire technology. The results show that both cutoff frequency (f/sub T/) and low-field mobility (/spl mu//sub eff/) of SiGe pFETs improve with the integrated Ge dose in the SiGe channel, when compared to the Si pFET. Silicon CMOS on sapphire (Al/sub 2/O/sub 3/) technology is ideally suited for microwave circuits since it has a low dielectric loss substrate, low noise figure, excellent radiation hardness, and reduced punch-through effects. Recent studies of SiGe CMOS on sapphire technology have shown improvements in pFET mobility and transconductance at 300 K and 77 K, compared to Si. This work focuses on the effects of Ge profile in the SiGe channel on the low field mobility and cutoff frequency of a SiGe pFET on sapphire technology.

Keywords

Ge-Si alloys; MOSFET; carrier mobility; microwave transistors; sapphire; semiconductor materials; CMOS; DC properties; Ge profile; SiGe pFET on sapphire technology; SiGe-Al/sub 2/O/sub 3/; cutoff frequency; frequency response; low-field mobility; microwave properties; transconductance; CMOS technology; Cutoff frequency; Dielectric losses; Dielectric substrates; Frequency response; Germanium silicon alloys; Integrated circuit technology; Microwave circuits; Microwave technology; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1997. 5th

Conference_Location

Fort Collins, CO, USA

Print_ISBN

0-7803-3911-8

Type

conf

DOI

10.1109/DRC.1997.612501

Filename

612501