DocumentCode :
2944763
Title :
Process and chamber health monitoring of plasma enhanced ti deposition process through high performance VI-probe
Author :
Baek, Kye Hyun ; Coonan, Barry ; Carbery, Marcus ; Joo, Jinkyung ; Woo, Hyunsoo ; Lee, Tae Soon ; An, Hyeon Soo ; Koo, Yoonbon ; Han, Cheonsu ; Han, Sungho ; Kim, Yongjin ; Choi, Seong Woon ; Han, Woosung
Author_Institution :
Samsung Electron. Co. Ltd., Hwasung
fYear :
2007
fDate :
15-17 Oct. 2007
Firstpage :
1
Lastpage :
4
Abstract :
As an alternative to plasma sensors, high performance VI probe was evaluated in a plasma enhanced Ti deposition process. Its utilization was focused on finding any reasonable differences between good and bad chambers classified in terms of end of line yield data. Some differences of delivered power and time trace current signal between chambers were found, which well matches the good and bad chamber classification. Also, a fault detection and classification algorithm to handle huge amount of raw VI-probe data was evaluated. The algorithm estimates deviation of TiCl4 content in plasma occurs right after preventive maintenance, which might be considered as a chamber conditioning procedure. Despite requiring additional evaluations, the combination of VI-probe and well-developed algorithm might be a feasible solution where conventional plasma sensors can not be applied.
Keywords :
fault location; plasma deposition; plasma probes; ISSM paper; PC-P-059; VI probe; fault detection; health monitoring; plasma enhanced deposition; plasma sensors; Inductors; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Probes; Sensor phenomena and characterization; Signal processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1523-553X
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
Type :
conf
DOI :
10.1109/ISSM.2007.4446841
Filename :
4446841
Link To Document :
بازگشت