Shubnikov-de Haas Oscillation and Potentiometric Methods for Spin–Orbit Interaction Parameter Measurement in an InAs Quantum Well

Author

Kyung-Ho Kim ; Hyun Cheol Koo ; Joonyeon Chang ; Yun-Suk Yang ; Hyung-Jun Kim

Author_Institution

Spin Convergence Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

Volume

50

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

18

Lastpage

21

Abstract

Rashba spin-orbit interaction (SOI) in double-sided-doped InAs quantum well (QW) structures has been investigated by means of Shubnikov-de Haas oscillation and potentiometric measurements. Different doping density in two separate carrier supply layers induces the asymmetric potential gradient of the InAs QW and larger charge concentration on the side of a more heavily doped carrier supply layer. The Rashba SOI parameter (α) drastically increases from ~ 3.5×10^-12 to ~ 6.9×10^-12 eV-m as a gate electric field (Vg) decreases from 5 to -10 V. On the other hand, different distances between a ferromagnet and the InAs QW effectuate one order of magnitude difference in junction resistance area (RA). This experimental result distinctly reveals the junction RA between a ferromagnet and a semiconductor QW is a crucial factor to obtain a hysteresis loop-like potentiometric signal.

Keywords

III-V semiconductors; Shubnikov-de Haas effect; doping profiles; ferromagnetic materials; indium compounds; iron alloys; magnetic hysteresis; nickel alloys; semiconductor doping; semiconductor quantum wells; semiconductor-metal boundaries; spin-orbit interactions; InAs-Ni₈₁Fe₁₉; Rashba SOI parameter; Rashba spin-orbit interaction; Shubnikov-de Haas oscillation; asymmetric potential gradient; charge concentration; doping density; double-sided-doped quantum well; ferromagnet; gate electric field; heavily doped carrier supply layer; hysteresis loop-like potentiometric signal; junction resistance area; potentiometric methods; spin-orbit interaction parameter measurement; Detectors; Frequency modulation; Junctions; Logic gates; Magnetic field measurement; Oscillators; Semiconductor device measurement; Gate voltage dependence; InAs quantum well (QW); potentiometry; spin–orbit interaction (SOI);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2013.2283850

Filename

6613513