Magnetic and Writing Properties of Clad Lines in a Toggle MRAM

Savtchenko proposed a toggle MRAM in which the half-selected writing disturb phenomena is eliminated. The writing currents of the toggle MRAM were high. To reduce the current, magnetic cladding was used for both the word and bit lines. However, the structure of the clad line has not been reported yet. We investigated the relation between the magnetic properties and structures of the clad line by changing the deposition conditions. Moreover, we applied the optimized clad lines to toggle memories.