Cross-polarization modulation effects in long semiconductor optical amplifiers

Author

Said, Youssef ; Rezig, Houria ; Bouallegue, Ammar

Author_Institution

Nat. Eng. Sch., Tunis

fYear

2007

fDate

6-8 Dec. 2007

Firstpage

1

Lastpage

5

Abstract

The aim of the present work is to present an analysis of the impact of Semiconductor Optical Amplifier length variation on the cross-polarization modulation (XPolM) effect in the structure. This nonlinear behavior, which is exploited to assure high speed devices and various applications for the high bit rate optical networks, is investigated referring to numerical simulations based on Stokes parameters measurement. Consequently, it is shown that the azimuth and the ellipticity parameters at the output undergo changes by varying the input polarization, bias current and obviously the SOA length which plays an important role in the gain dynamics of the structure.

Keywords

nonlinear optics; optical modulation; semiconductor optical amplifiers; Stokes parameters; bias current; cross-polarization modulation; ellipticity parameters; gain dynamics; high bit rate optical networks; nonlinear behavior; numerical simulations; semiconductor optical amplifiers; Bit rate; High speed optical techniques; Nonlinear optics; Numerical simulation; Optical fiber networks; Optical polarization; Optical signal processing; Optical wavelength conversion; Semiconductor optical amplifiers; Stokes parameters; cross-polarization modulation (XPolM); nonlinearity; polarization rotation; semiconductor optical amplifier (SOA); stokes parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007

Conference_Location

Sousse

Print_ISBN

978-1-4244-1639-4

Electronic_ISBN

978-1-4244-1639-4

Type

conf

DOI

10.1109/ICTONMW.2007.4446944

Filename

4446944