Electromagnetic macro-modeling of 3D high density trenched silicon capacitors for wafer-level-packaging

Author

Wane, Sidina ; Muhlhaus, Volker ; Rautio, James

Author_Institution

NXP-Semiconductors, 2 Esplanade Anton Philips, Campus EffiScience, Colombelles, BP 2000, 14906 CAEN Cedex 9 France

fYear

2008

fDate

15-20 June 2008

Firstpage

519

Lastpage

522

Abstract

In this paper a full-wave electromagnetic (EM) macomodeling of 3D high-density trenched capacitors is proposed based on planar EM Method of Moments. The results are used to derive scalable wide-band SPIC E-compatible models synthesis easy to include in Physical Design Kit (PDK) libraries for frequency and time domain block-level and system-level simulations. Comparison of both EM macro-models and wideband extracted models with measurement data for various test case structures demonstrate satisfactory results for frequencies up 50 GHz.

Keywords

capacitors; method of moments; wafer level packaging; 3D high density trenched silicon capacitors; electromagnetic macro-modeling; frequency domain block-level; method of moments; physical design kit libraries; scalable wide-band SPICE-compatible models synthesis; system-level simulations; time domain block-level; wafer-level-packaging; Capacitors; Data mining; Frequency measurement; Frequency synthesizers; Libraries; Moment methods; Semiconductor device modeling; Silicon; Testing; Wideband; 3D high-density trenched capacitors; Compact wideband models; Electromagnetic macro-modeling; System-in-Package (SiP); System-on-Chip (SoC); Wafer-Level Packaging; model synthesis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633217

Filename

4633217