Title :
A V-band wide locking range CMOS frequency divider
Author :
Luo, Tang-Nian ; Chen, Yi-Jan Emery ; Heo, Deukhyoun
Author_Institution :
Graduate Institute of Electronics Engineering and Graduate Institute of Communication Engineering National Taiwan University, Taipei, Taiwan
Abstract :
This paper presents a V-band wide locking range 0.18-mum CMOS frequency divider. The resonator-based injection-locked frequency dividers (ILFD) inherently suffer from narrow locking range. The combination of common-node injection and direct injection is proposed to improve the signal injection efficiency and locking range. Compared to the conventional direct injection technique, the proposed technique is capable of doubling the dividerpsilas locking range. Operated at 1.4 V, the frequency divider core consumes 2.8 mW of power. The measured free running frequency and output power of the divider are 28.17 GHz and -22.84 dBm, respectively. The locking range is 4.9 GHz around the input frequency of 56 GHz. With high operating frequency, wide locking range, and low power consumption, this work achieves the excellent figure-of-merit (FOM), which is much better than the frequency dividers implemented in the same generation CMOS process. The overall chip size is 0.77 times 0.49 mm2.
Keywords :
CMOS integrated circuits; frequency dividers; millimetre wave integrated circuits; power consumption; CMOS frequency divider; V-band wide locking range; common-node injection; direct injection; figure-of-merit; frequency 28.17 GHz; frequency 4.9 GHz; frequency 56 GHz; power 2.8 mW; power consumption; resonator-based injection-locked frequency dividers; signal injection efficiency; size 0.18 mum; voltage 1.4 V; Energy consumption; Frequency conversion; Frequency measurement; Millimeter wave technology; Millimeter wave transistors; Power generation; Resonant frequency; Signal processing; Switches; Voltage-controlled oscillators; CMOS; V-band; frequency divider; millimeter-wave; wide locking range;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633228