Magnetic and electrical properties of magnetic tunnel junctions with radical oxidized MgO barriers

Author

Oh, S. ; Jeong, J. ; Nam, K. ; Lee, J. ; Kim, Heonhwan ; Park, S. ; Kim, Heonhwan ; Chung, U. ; Moon, J.

Author_Institution

Samsung Electron. Co. Ltd., Yongin

fYear

2006

fDate

8-12 May 2006

Firstpage

862

Lastpage

862

Abstract

This paper aims to investigate the magnetic and electrical properties of magnetic tunnel junctions with MgO barriers. The magnetoresistance of the junction is measured at 0.4 V. Results show a magnetoresistance of almost the same values at varying radical oxidation time and Mg thickness. It is also confirmed in this study that the MgO formed by radical oxidation of Mg shows high magnetoresistance as compared to the conventional RF deposited MgO barriers.

Keywords

boron alloys; cobalt alloys; free radical reactions; iron alloys; magnesium compounds; magnetic multilayers; manganese alloys; oxidation; platinum alloys; ruthenium; tantalum; tunnelling magnetoresistance; Mg; PtMn-CoFe-Ru-CoFeB-MgO-CoFeB-Ta - Interface; RF deposited barriers; magnetic tunnel junctions; magnetoresistance; radical oxidation; voltage 0.4 V; Electrodes; Kinetic energy; Magnetic properties; Magnetic semiconductors; Magnetic tunneling; Oxidation; Plasma applications; Plasma properties; Radio frequency; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.374893

Filename

4262295