Title :
Noise Modeling Including Effect of propagation along the gate of a field-effect transistor
Author :
Balti, M. ; Samet, A. ; Pasquet, D. ; Bourdel, E.
Author_Institution :
Lab. SysCom, ENIT, Tunis
Abstract :
The transistors with large gate width are not really used by microwave circuit, because of the propagation phenomena problems and thermal dissipation (thermal noise). But the usefully frequencies becomes increasingly high, so the current short transistors will be affected by the propagation phenomena. This large width transistor noise analysis is fault of measurements limits beyond 18 GHz.
Keywords :
MMIC; fault diagnosis; field effect transistors; semiconductor device noise; thermal noise; current short transistors; field-effect transistor; microwave circuit; noise analysis; noise modeling; propagation effect; thermal dissipation; thermal noise; Circuit faults; Circuit noise; Frequency; Integrated circuit measurements; Microwave FETs; Microwave circuits; Microwave propagation; Microwave transistors; Noise figure; Noise measurement;
Conference_Titel :
Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on
Conference_Location :
Gammarth
Print_ISBN :
978-9972-61-100-1
Electronic_ISBN :
978-9972-61-100-1
DOI :
10.1109/ICECS.2005.4633408