• DocumentCode
    2950797
  • Title

    Terabit/s parallel optical connections to silicon CMOS chips: lessons learned from the SPOEC technology demonstrator

  • Author

    Walker, A.C.

  • Author_Institution
    Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
  • fYear
    2000
  • fDate
    10-15 Sept. 2000
  • Abstract
    Summary form only given. We have assembled the components of an optoelectronic 16 Gbit/s crossbar switch designed to include, internally, an optical data rate to a hybrid InGaAs/silicon chip in the Tbit/s regime. Input to the demonstrator is by an 8 x 8 VCSEL array operating at 250 Mbit/s/channel. These 64 channels are fanned out 8 x 8 times, using diffractive optics, to give the high overall data rate (Tbit/s) onto the hybrid switching chip. This chip includes an array of 4096 InGaAs-based p-i-n detectors solder-bump bonded to silicon CMOS.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; VLSI; data communication; gallium arsenide; indium compounds; optical interconnections; parallel architectures; photodetectors; 0.6 mum; 16 Gbit/s; 250 Mbit/s; 8 x 8 VCSEL array; InGaAs; InGaAs-based p-i-n detectors; Mbit/s/channel; SPOEC technology demonstrator; Si; Tbit/s regime; Terabit/s parallel optical connections; diffractive optics; high overall data rate; hybrid InGaAs/silicon chip; hybrid switching chip; optical data rate; optoelectronic Gbit/s crossbar switch; silicon CMOS; silicon CMOS chips; solder-bump bonded; Assembly; Indium gallium arsenide; Optical design; Optical devices; Optical diffraction; Optical switches; PIN photodiodes; Sensor arrays; Silicon; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
  • Conference_Location
    Nice
  • Print_ISBN
    0-7803-6319-1
  • Type

    conf

  • DOI
    10.1109/CLEOE.2000.910006
  • Filename
    910006