DocumentCode :
2951463
Title :
Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS
Author :
Mortezaee, R. ; Karimi, Gh R. ; Mirzakuchaki, S.
fYear :
2007
fDate :
3-5 Oct. 2007
Firstpage :
1
Lastpage :
6
Abstract :
During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need of modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using ordinary differential algebraic equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device models must be available. In this paper potential merits of the new IEEE VHDL-AMS standard in the field of modeling of semiconductor devices are discussed. The device models for diodes and the principles, techniques and methodology used to achieve the design of an analytical third generation Spice transistor MOS model named EKV are presented. This is done by taking into account the thermoelectrical effect with VHDL-AMS, and with relevant parameters set to match a deep submicron technology developed in VHDL-AMS. The models were validated using system vision from mentor graphics.
Keywords :
MOSFET; SPICE; circuit simulation; differential algebraic equations; discrete event systems; hardware description languages; semiconductor diodes; Spice transistor MOS model; VHDL-AMS; analog electronic circuits; behavioral modeling; discrete-event systems; ordinary differential algebraic equations; semiconductor circuits; semiconductor devices; simulation tools; Circuit simulation; Differential algebraic equations; Discrete event systems; Electronic circuits; MOSFETs; Machine vision; Semiconductor device modeling; Semiconductor devices; Semiconductor diodes; Thermoelectricity; Behavioral modeling; EKV; VHDL-AMS; thermoelectrical effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Intelligent Signal Processing, 2007. WISP 2007. IEEE International Symposium on
Conference_Location :
Alcala de Henares
Print_ISBN :
978-1-4244-0830-6
Electronic_ISBN :
978-1-4244-0830-6
Type :
conf
DOI :
10.1109/WISP.2007.4447516
Filename :
4447516
Link To Document :
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