Selective preparation of single-phase boron-rich silicon borides films by pulsed Nd:YAG laser ablation method

Author

Suzuki, K. ; Nakata, J.

Author_Institution

Dept. of Electr. Eng., Nihon Univ., Tokyo, Japan

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only. We report a successful selective preparation of single-phase boron-rich silicon boride (SiB) films for thermo-electric energy conversion device by pulsed Nd:YAG laser ablation method. In this process, SiB films on silicon substrate were produced by a pulsed laser ablation method in 10 mtorr argon gas. X-ray diffraction patterns and electron probe micro analyzer (EPMA) analysis of deposited films show single-phase composition.

Keywords

X-ray diffraction; electron probe analysis; optical films; pulsed laser deposition; silicon compounds; thermoelectric conversion; 10 mtorr; Ar; SiB; SiB) film thermo-electric energy conversion device; X-ray diffraction patterns; YAG:Nd; YAl5O12:Nd; argon gas; boron-rich silicon boride films; electron probe micro analyzer; pulsed Nd:YAG laser ablation method; pulsed laser ablation method; selective preparation; silicon substrate; single-phase; single-phase composition; Argon; Energy conversion; Gas lasers; Laser ablation; Optical pulses; Pattern analysis; Pulsed laser deposition; Semiconductor films; Silicon; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.910077

Filename

910077