Title :
Light emission from erbium-doped multilayer porous silicon microcavity
Author :
Zhou, Yangzhong ; Snow, P.A. ; Russell, P.S.J.
Author_Institution :
Dept. of Phys., Bath Univ., UK
Abstract :
Summary form only given. There is substantial interest in obtaining light emission in silicon at wavelengths away from 750 nm porous silicon (p-Si) emission band. Erbium ions, incorporated into sponge-like structure of p-Si, can produce light emission at 1540 nm. We report for the first time light emission from a multilayer porous silicon microcavity, into which the Er-ions were doped electrochemically as luminescence centres.
Keywords :
cavity resonators; elemental semiconductors; erbium; optical multilayers; optical resonators; photoluminescence; porous semiconductors; semiconductor doping; silicon; 1540 nm; 298 K; 750 nm; Er-doped multilayer porous Si microcavity; Si; Si:Er; electrochemically doping; emission band; light emission; luminescence centres; multilayer porous Si microcavity; p-Si; sponge-like structure; Continuous wavelet transforms; Etching; Ethanol; Luminescence; Microcavities; Nonhomogeneous media; Optical modulation; Silicon; Snow; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.910088
