DocumentCode :
2952584
Title :
Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell
Author :
Imamoto, Takuya ; Endoh, Tetsuo
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
fYear :
2013
fDate :
7-10 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
Excellent thermal characteristics of the bulk vertical-channel bipor junction transistor (BJT) type 1T-DRAM compared to the SOI planar type with 20nm generation. The bulk vertical type can operate with the low increase of lattice temperature (ΔTLmax) of 26K and high enough read current margin of 1.8μA/cell, while the SOI planar type shows large ΔTLmax value of 58K.
Keywords :
DRAM chips; bipolar transistors; silicon-on-insulator; SOI planar type; bipolar junction transistor; bulk vertical-channel BJT-type capacitorless 1T-DRAM cell; read current margin; self-heating effect suppression; size 20 nm; temperature 26 K; temperature 58 K; Junctions; Lattices; Logic gates; MOSFET; Random access memory; Silicon-on-insulator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/S3S.2013.6716574
Filename :
6716574
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2952584
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