DocumentCode
2953448
Title
A 900-MHz, 0.8-μm CMOS low noise amplifier with 1.2-dB noise figure
Author
Floyd, Brian A. ; Mehta, Jesal ; Gamero, Carlos ; Kenneth, K.O.
Author_Institution
SiMICS, Florida Univ., Gainesville, FL, USA
fYear
1999
fDate
1999
Firstpage
661
Lastpage
664
Abstract
A 900-MHz single-stage low noise amplifier (LNA), requiring one external inductor and matched to 50-Ω at both the input and output, has been implemented in a standard digital 0.8-μm CMOS technology. Measured noise figures for the LNA in package are 2 dB at 6.2 mW, 1.78 dB at 8.1 mW, 1.5 dB at 13.2 mW, and 1.2 dB at 30 mW. At 30 mW and VDD=3.0 V, the LNA has a power gain of 14.5 dB, and an IIP3 of -1 dBm. At 6.2 mW and VDD=2.7 V, the LNA has a power gain of 9.4 dB, and an IIP3 of -3.8 dBm
Keywords
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; 0.8 micron; 1.2 dB; 900 MHz; IIP3; digital CMOS technology; noise figure; power gain; single-stage low noise amplifier; Capacitance; Circuit noise; Impedance matching; Inductors; Integrated circuit noise; Low-noise amplifiers; Noise figure; Noise measurement; Scattering parameters; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999
Conference_Location
San Diego, CA
Print_ISBN
0-7803-5443-5
Type
conf
DOI
10.1109/CICC.1999.777367
Filename
777367
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