DocumentCode
295564
Title
Application of GaAs and InP-based HEMT technology to MILSATCOM systems
Author
Smith, P.M. ; Chao, P.C. ; Ho, P. ; Duh, K.H.G. ; Liu, S.M.J. ; Creamer, C.T. ; Kopp, W.F. ; Komiak, J.J. ; Ballingall, J.M. ; Swanson, A.W.
Author_Institution
Lockheed Martin Electron. Lab., Syracuse, NY, USA
Volume
2
fYear
1995
fDate
35010
Firstpage
731
Abstract
The development in our laboratory of microwave high electron mobility transistors (HEMTs) to enhance the front-end performance of space and terrestrial MILSATCOM systems is described. The application of two HEMT types, the GaAs-based PHEMT and the InP HEMT, to EHF receivers and transmitters is reviewed
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; microwave receivers; military communication; radio transmitters; satellite communication; EHF receivers; EHF transmitters; GaAs; HEMT; HEMT technology; III-V semiconductors; InP; MILSATCOM systems; MMIC; PHEMT; front-end performance; microwave applications; microwave high electron mobility transistors; space MILSATCOM systems; terrestrial MILSATCOM systems; Fabrication; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Laboratories; MMICs; Noise figure; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Military Communications Conference, 1995. MILCOM '95, Conference Record, IEEE
Conference_Location
San Diego, CA
Print_ISBN
0-7803-2489-7
Type
conf
DOI
10.1109/MILCOM.1995.483561
Filename
483561
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