DocumentCode
2955865
Title
Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors
Author
Mao, R.W. ; Li, C.B. ; Zuo, Y.H. ; Cheng, B.W. ; Teng, X.G. ; Luo, L.P. ; Yu, J.Z. ; Wang, Q.M.
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
104
Lastpage
106
Abstract
Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3∼1.6 μm were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical fabrication; photodetectors; semiconductor growth; silicon; sol-gel processing; 1476 nm; 3 GHz; 44 percent; InGaAs; Si; quantum efficiency; resonant cavity enhanced photodetectors; silicon-based tunable InGaAs RCE photodetectors; sol-gel bonding; Bandwidth; Costs; Distributed Bragg reflectors; Fabrication; Indium gallium arsenide; Indium phosphide; Photodetectors; Resonance; Substrates; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416677
Filename
1416677
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