DocumentCode
295620
Title
Quantum disk lasers with self-organized dot-like active regions
Author
Temmyo, Joro ; Kuramochi, Eiichi ; Sugo, Mitsuru ; Nishiya, Teruhiko ; Nötzel, Richard ; Tamamura, Toshiaki
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
1
fYear
1995
fDate
30-31 Oct 1995
Firstpage
77
Abstract
Although there have been controversial discussions about the validity of quantum dot lasers, few experimental results have been reported because of the difficulty of fabricating a quantum dot structure suitable for laser applications. Here we introduce a novel self-organization phenomenon that occurs in a strained InGaAs-AlGaAs system during the interrupted epitaxial growth on a GaAs (311)B substrate and that forms microcrystals with built-in quantum disks. We describe and discuss the performance of strained InGaAs quantum disk lasers with nanoscale active regions fabricated by self-organization phenomenon
Keywords
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; self-adjusting systems; semiconductor growth; semiconductor quantum dots; GaAs; GaAs (311)B substrate; InGaAs-AlGaAs; built-in quantum disks; interrupted epitaxial growth; laser applications; microcrystals; nanoscale active regions; quantum disk lasers; quantum dot lasers; quantum dot structure fabrication; self-organization phenomenon; self-organized dot-like active regions; strained InGaAs quantum disk lasers; strained InGaAs-AlGaAs system; Epitaxial growth; Filling; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484516
Filename
484516
Link To Document