Temperature effects on the high speed performance of quantum well lasers

Author

Spencer, Robert M. ; O´Keefe, Sean S. ; Schaff, William J. ; Eastman, Lester F. ; Tsai, Chin-Yi

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

99

Abstract

We show the results of an experimental investigation into the limitations of the high speed direct modulation bandwidth of semiconductor lasers. It is shown that contrary to predictions based on a simple two rate equation model the resonant frequency saturates at large DC biases. The overall response of the laser diode is still underdamped when the resonant frequency saturates, thus the laser does not reach the maximum bandwidth predicted by the K factor measured at low DC bias points

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; optical modulation; optical saturation; quantum well lasers; DC bias; DC bias points; InGaAs-AlGaAs; K factor; direct modulation bandwidth; high speed performance; laser diode; maximum bandwidth; quantum well lasers; rate equation model; resonant frequency; resonant frequency saturation; semiconductor lasers; temperature effects; Bandwidth; Diode lasers; Equations; Frequency measurement; Laser modes; Predictive models; Quantum well lasers; Resonant frequency; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484527

Filename

484527