Design and characterization of 1.55 μm InP-based MQW ridge and buried heterostructure lasers with low threshold currents and high modulation bandwidths

Author

Yoon, H. ; Gutierrrez-Aitken, A.L. ; Bhattacharya, P. ; Lourdudoss, S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

273

Abstract

Summary form only given. In this work, we have optimized the design and fabrication of 1.55 μm InP-based ridge and BR lasers with compressively strained and strain compensated MQW separate confinement heterostructures. Our objective was to determine the performance characteristics of optimally designed lasers under low photon density conditions

Keywords

III-V semiconductors; deformation; indium compounds; optical communication equipment; optical design techniques; optical modulation; optimisation; quantum well lasers; ridge waveguides; waveguide lasers; 1.55 μm InP-based MQW ridge waveguide lasers; 1.55 mum; BR lasers; InP; MQW separate confinement heterostructures; buried heterostructure lasers; compressively strained; high modulation bandwidths; low photon density conditions; low threshold currents; optimally designed lasers; performance characteristics; strain compensated; Bandwidth; Gold; Laser modes; Laser theory; Masers; Optical design; Optical waveguides; Quantum well devices; Solid lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484866

Filename

484866