• DocumentCode
    29571
  • Title

    A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors

  • Author

    Chang Hyun Kim ; Castro-Carranza, Alejandra ; Estrada, M. ; Cerdeira, Antonio ; Bonnassieux, Yvan ; Horowitz, Gilles ; Iniguez, B.

  • Author_Institution
    Laboratoire de Physique des Interfaces et des Couches Minces (CNRS UMR-7647), Ecole Polytechnique, Palaiseau, France
  • Volume
    60
  • Issue
    3
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    1136
  • Lastpage
    1141
  • Abstract
    Here, we propose an advanced compact analytical current–voltage model for organic field-effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We improved the output saturation behavior by introducing a new asymptotic function that also enables more precise low-voltage current and conductance fitting. A new expression for the subthreshold current was suggested to cover all operation regimes of OFETs. All model parameters were extracted by a systematic method, and the comparison of the modeled current with the experimental data on pentacene-based OFETs confirmed the validity of the model over a wide operation range.
  • Keywords
    Analytical models; Data models; Integrated circuit modeling; Mathematical model; OFETs; Semiconductor device modeling; Asymptotic behaviors; circuit simulation; compact modeling; organic field-effect transistors (OFETs);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2238676
  • Filename
    6420920