A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements

Author

Llinares, P. ; Ghibaudo, G. ; Gambetta, N. ; Mourier, Y. ; Monroy, A. ; Lecoy, G. ; Chroboczek, J.A.

Author_Institution

CNET, Meylan, France

fYear

1998

fDate

23-26 Mar 1998

Firstpage

67

Lastpage

71

Abstract

A novel method of extraction of emitter and base resistances of bipolar junction transistors (BJTs) involving both static characteristics and low frequency noise data is proposed and tested on quasi-self-aligned BJTs. The method requires no special test structures and applies to transistors working in the normal operation regime. It may be therefore readily applied to test procedures for various types of BJTs

Keywords

bipolar transistors; electric resistance measurement; semiconductor device noise; semiconductor device testing; BJT test procedures; BJTs; base resistance; base resistance extraction; bipolar junction transistors; emitter resistance; emitter resistance extraction; low frequency noise measurements; quasi-self-aligned BJTs; static characteristics; static measurements; test structures; Bipolar transistors; Data mining; Electrical resistance measurement; Fluctuations; Frequency measurement; Low-frequency noise; Microelectronics; Noise measurement; Semiconductor device noise; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688043

Filename

688043