• DocumentCode
    2957308
  • Title

    1.55 /spl mu/m DFB laser integrated on erbium doped phosphate glass substrate

  • Author

    Blaize, S. ; Broquin, J.E. ; Barbier, D. ; Cassagnetes, C.

  • Author_Institution
    Univ. Joseph Fourier, Grenoble, France
  • fYear
    2000
  • fDate
    10-15 Sept. 2000
  • Abstract
    Summary form only given. Recently, a new efficient waveguide amplifier on phosphate glass has been demonstrated. In this paper, we present the first steps of fabrication and analysis of 10 monolithically integrated DFB lasers on a chip. The starting point of our work is a Er/Yb co-doped phosphate, on which buried channel waveguides have been realized using ion exchanged techniques. The glass is etched sufficiently to get more than 60% of reflectivity at Bragg wavelength. Under pumping at 980 nm, single longitudinal mode operation around 1.55 /spl mu/m is demonstrated for all the ten waveguides of the chip.
  • Keywords
    distributed feedback lasers; erbium; integrated optoelectronics; ion exchange; optical communication equipment; optical fabrication; optical pumping; solid lasers; waveguide lasers; wavelength division multiplexing; ytterbium; 1.55 mum; 488 nm; 980 nm; Bragg wavelength; DFB laser; Er/Yb co-doped phosphate; buried channel waveguide; diffraction gratings; erbium doped phosphate glass substrate; ion exchanged techniques; monolithically integrated DFB lasers; reflectivity; single longitudinal mode operation; waveguide laser amplifier; Erbium; Erbium-doped fiber lasers; Glass;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
  • Conference_Location
    Nice
  • Print_ISBN
    0-7803-6319-1
  • Type

    conf

  • DOI
    10.1109/CLEOE.2000.910393
  • Filename
    910393