Title :
Electrical characteristics of 0°/±45°/90°-orientation CMOSFET with source/drain fabricated by various ion-implantation methods
Author :
Ohzone, Takashi ; Okina, Mika ; Matsuda, Toshihiro
Author_Institution :
Toyama Univ., Japan
Abstract :
Electrical characteristics of 0°/±45°/90°-orientation 0.5 μm CMOSFETs with source/drain regions fabricated by three ion-implantation methods were discussed. For an asymmetrical one-sided 7°-implantation method, large device orientation dependent fluctuation and asymmetry were observed in saturation drain current ID and maximum substrate current IB of both n- and p-MOSFETs/threshold voltage VT of p-MOSFETs, and in ID of n-MOSFETs/IB of both n- and p-MOSFETs, respectively. However, almost comparable data were obtained for symmetrical 0°-implantation and 7°×4-implantation methods. The symmetrical 7°×4-implantation method was most preferable to obtain symmetrical electrical characteristics for use in LSIs, because of high punchthrough immunity in scaled CMOSFETs
Keywords :
CMOS integrated circuits; MOSFET; current fluctuations; doping profiles; integrated circuit testing; ion implantation; large scale integration; 0.5 micron; CMOSFET angular orientation; CMOSFETs; LSIs; asymmetrical one-sided implantation method; device orientation dependent asymmetry; device orientation dependent fluctuation; electrical characteristics; ion-implantation methods; maximum substrate current; n-MOSFETs; p-MOSFETs; punchthrough immunity; saturation drain current; scaled CMOSFETs; source/drain fabrication; source/drain regions; symmetrical electrical characteristics; symmetrical implantation; threshold voltage; CMOS process; CMOSFETs; Electric variables; Fluctuations; Hot carriers; Informatics; MOSFET circuits; Shadow mapping; Testing; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688056
