• DocumentCode
    2959158
  • Title

    Asymmetric condition computed from the four tone input GaN HEMT

  • Author

    Yildirim, Remzi ; Çeleb, F.V. ; Yavuzcan, H. Güçlü ; Gökrem, Levent

  • Author_Institution
    Fac. of Ind. Arts, Gazi Univ., Ankara, Turkey
  • fYear
    2009
  • fDate
    14-16 Oct. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (¿0). In addition to that, the critical operating frequency interval is established.
  • Keywords
    III-V semiconductors; Volterra series; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; IMD components; asymmetric condition; carrier frequency; critical operating frequency; gate-source voltage; high electron mobility transistor; Art; Capacitance; Computer industry; Feedback; Frequency; Gallium nitride; HEMTs; MODFETs; Transconductance; Voltage; Asymmetry; HEMT; Inte rmodulation; Volterra Series;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Application of Information and Communication Technologies, 2009. AICT 2009. International Conference on
  • Conference_Location
    Baku
  • Print_ISBN
    978-1-4244-4739-8
  • Electronic_ISBN
    978-1-4244-4740-4
  • Type

    conf

  • DOI
    10.1109/ICAICT.2009.5372485
  • Filename
    5372485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2959158