On the use of test structures for the electro-mechanical characterization of a CMOS compatible MEMS technology

Author

Latorre, Laurent ; Bertrand, Yves ; Nouet, Pascal

Author_Institution

Univ. des Sci. et Tech. du Languedoc, Montpellier, France

fYear

1998

fDate

23-26 Mar 1998

Firstpage

177

Lastpage

182

Abstract

In this paper, we discuss the use of test structures to characterize a microsystem technology. Using simple devices and elementary mechanical relations, we determine the properties of sensor components, i.e. the piezoresistive factor of polysilicon and a complete set of electro-mechanical relations that can be used for microsystems design

Keywords

CMOS integrated circuits; VLSI; electric sensing devices; micromachining; microsensors; piezoresistance; piezoresistive devices; semiconductor device testing; CMOS compatible MEMS technology; Si; electro-mechanical characterization; electro-mechanical relations; elementary mechanical relations; microsystem technology; microsystems design; polysilicon piezoresistive factor; sensor components; test structures; Application specific integrated circuits; CMOS technology; Costs; Micromachining; Micromechanical devices; Sensor phenomena and characterization; Silicon; Space technology; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688064

Filename

688064