DocumentCode :
2962282
Title :
A New PhotoFET for Monolithic Active Pixel Sensors Using CMOS Submicronic Technology
Author :
Heini, Sébastien ; Hu-Guo, Christine ; Winter, Marc ; Hu, Yann
Author_Institution :
Inst. Pluridisciplinaire Hubert Curien, Strasbourg
fYear :
2006
fDate :
10-13 Dec. 2006
Firstpage :
1148
Lastpage :
1151
Abstract :
Monolithic active pixel sensors (MAPS) using standard low cost CMOS technology available from industrial manufacturers have demonstrated excellent tracking performances for minimum ionizing particles. The need for highly granular, fast, thin and radiation tolerant pixel arrays equipping vertex detectors drives an intense R&D effort, aiming to optimize the intrinsic sensor performances. Following this main issue, we present a new design of photoFET. This structure offers the advantage to integrate inside the sensing element an amplification using PMOS transistor with a high sensitivity and a large dynamic. The proposed photoFET has been implemented with an AMS 0.35 mum process. In this paper, the photoFET architectures were presented and the main measured results were shown.
Keywords :
CMOS image sensors; photodetectors; phototransistors; CMOS submicronic technology; PMOS transistor; PhotoFET; ionizing particles; monolithic active pixel sensors; radiation tolerant pixel arrays; size 0.35 mum; vertex detectors; CMOS image sensors; CMOS process; CMOS technology; Conductivity; Diodes; Ionizing radiation sensors; Radiation detectors; Sensor arrays; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location :
Nice
Print_ISBN :
1-4244-0395-2
Electronic_ISBN :
1-4244-0395-2
Type :
conf
DOI :
10.1109/ICECS.2006.379643
Filename :
4263575
Link To Document :
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