• DocumentCode
    2962468
  • Title

    Modeling of cascode modulated power amplifiers

  • Author

    Sira, Daniel ; Larsen, Torben

  • Author_Institution
    Dept. of Electron. Syst., Aalborg Univ., Aalborg, Denmark
  • fYear
    2011
  • fDate
    14-15 Nov. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Two models of the cascode modulated polar power amplifier (PA) are presented. The cascode modulated PA, that operates as a switch mode amplifier with class-E like output network, has a highly nonlinear transfer characteristic. The proposed empirical model is based on modeling of the peak drain current through the cascode connected transistors. A simplified analytical model, that uses mathematical expressions to describe the nonlinear transfer characteristic of the cascode modulated PA, is proposed. The behavior of the proposed baseband models is compared with the RF domain simulations in a 0.13μm CMOS process.
  • Keywords
    CMOS analogue integrated circuits; power amplifiers; radiofrequency integrated circuits; CMOS process; RF domain simulation; baseband model; cascode connected transistor; cascode modulated polar power amplifier; nonlinear transfer; peak drain current; size 0.13 mum; switch mode amplifier; Analytical models; CMOS process; Radio frequency; Switches; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    NORCHIP, 2011
  • Conference_Location
    Lund
  • Print_ISBN
    978-1-4577-0514-4
  • Electronic_ISBN
    978-1-4577-0515-1
  • Type

    conf

  • DOI
    10.1109/NORCHP.2011.6126711
  • Filename
    6126711