DocumentCode :
2963088
Title :
Integrated synapse multiplication circuit for million-neuron networks using sub-micron MOS charge pumping phenomenon
Author :
Sagara, Kazuhiko ; Smith, Anthony V.W.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Volume :
1
fYear :
1993
fDate :
25-29 Oct. 1993
Firstpage :
845
Abstract :
This paper presents a novel technique for implementing synaptic computation using MOS transistors in a diode configuration to perform synaptic multiplication with the resultant output current flowing into the bulk. The circuit contains only four transistors and can be designed with minimum feature size, which offers the possibility of massively parallel networks. In addition a novel technique to use bulk current summation is introduced, which is realized to place all synapses being connected to the same post-synaptic neuron in the same well. As a result the possibility of million neuron networks in a single silicon chip can be obtained.
Keywords :
CMOS integrated circuits; VLSI; multiplying circuits; neural chips; parallel architectures; MOS transistors; diode configuration; integrated synapse multiplication circuit; neuron networks; silicon chip; sub-micron MOS charge pumping phenomenon; Charge pumps; Computer networks; Frequency conversion; Laboratories; MOS devices; MOSFETs; Neural networks; Neurons; Pulse circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Neural Networks, 1993. IJCNN '93-Nagoya. Proceedings of 1993 International Joint Conference on
Print_ISBN :
0-7803-1421-2
Type :
conf
DOI :
10.1109/IJCNN.1993.714045
Filename :
714045
Link To Document :
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