Analysis of the temperature dependence of 1.3 μm AlGaInAs/InP multiple quantum-well lasers

Author

Pan, Jen-Wei ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

188

Lastpage

191

Abstract

The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 μm AlGaInAs/lnP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results

Keywords

Auger effect; III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; laser beams; quantum well lasers; transparency; 1.3 mum; 250 to 380 K; AlGaInAs-InP; AlGaInAs/InP multiple quantum-well lasers; Auger current; carrier density; characteristic temperatures; differential gain; leakage current; multiple quantum-well lasers; optical gain calculation; temperature dependence; temperature sensitivity; threshold current densities; threshold current density; transparency; Charge carrier density; Conducting materials; Indium phosphide; Leakage current; Optical materials; Optical sensors; Photonic band gap; Quantum well lasers; Temperature dependence; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491968

Filename

491968