Title :
1016 cm-3 electrically active and thermally stable deep Rh acceptors in InP
Author :
Dadgar, A. ; Kuttler, M. ; Strassburg, M. ; Heitz, R. ; Bimberg, D. ; Hyeon, J.Y. ; Grundemann, T. ; Schumann, H.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
We present a detailed investigation of the electrically active Rh concentration in low-pressure metalorganic chemical vapor-phase epitaxy grown InP:Rh in dependence of the growth parameters. Rh introduces two deep mid gap acceptor levels RhA and RhB in InP at Ev+0.71 eV and Ev+0.62 eV, respectively. Taking into account the low diffusivity of Rh in InP (Drh(800°C)⩽1×1014 cm2/s) Rh is an interesting candidate as compensating dopant for thermally stable semi-insulating InP. We show that the electrically active Rh concentration can be increased by a factor 5 using the inert carrier gas N2 instead of H2
Keywords :
III-V semiconductors; deep levels; impurity states; indium compounds; rhodium; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InP:Rh; deep Rh acceptors; electrically active acceptors; low-pressure MOCVD; mid gap acceptor levels; semiconductor; thermally stable acceptors; Chemicals; Doping; Epitaxial growth; Hydrogen; Indium phosphide; Inductors; Iron; MOCVD; Microscopy; Spectroscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492039
